Asian Journal of Information Technology
ISSN: Online 1993-5994ISSN: Print 1682-3915
Abstract
Tungsten silicide thin films were deposited on a Si substrate by magnetron RF sputtering of a composite target. In the first experiment, sputtering of a WSi2 target was performed in a silane-argon atmosphere (reactive sputtering). Thin films with ratio Si/W = 1.07 were obtained at the largest partial silane pressure allowed for in the sputtering apparatus. In the second experiment, Si richer thin films were obtained by non-reactive sputtering of a WSi2.7 target where a Si/W ratio of 1.7 was found. The ratio Si/W was measured by the Rutherford backscattering technique. After annealing for 30 minutes in a N2 atmosphere at 1000 C X-ray diffraction shows the tetragonal structure of WSi2. The resistivity value of these thin films is found to be about 60µ -cm.
How to cite this article:
H. Karmed and A. Khellaf . Tungsten Silicide Thin Films Preparation by Magnetron Sputtering.
DOI: https://doi.org/10.36478/ajit.2006.1383.1385
URL: https://www.makhillpublications.co/view-article/1682-3915/ajit.2006.1383.1385