H. Karmed  , A. Khellaf  , 
    Tungsten Silicide Thin Films Preparation  by Magnetron Sputtering,
    Asian Journal of Information Technology,
    Volume 5,Issue 12,
    2006,
    Pages 1383-1385,
    ISSN 1682-3915,
    ajit.2006.1383.1385,
    (https://makhillpublications.co/view-article.php?doi=ajit.2006.1383.1385)
    Abstract: Tungsten silicide thin films were deposited on a Si substrate  by magnetron RF  sputtering of a composite target. In the first experiment, sputtering of  a WSi<SUB>2</SUB> target was performed in a silane-argon atmosphere (reactive sputtering). Thin films with ratio Si/W = 1.07 were obtained at the largest partial silane pressure allowed for in the sputtering apparatus. In the second experiment, Si richer thin films were obtained by non-reactive sputtering of a WSi<SUB>2.7</SUB> target where a Si/W ratio of 1.7 was found. The ratio Si/W was measured by the Rutherford backscattering technique. After annealing for 30 minutes in a N<SUB>2</SUB> atmosphere at 1000 C X-ray diffraction  shows  the  tetragonal  structure of WSi<SUB>2</SUB>. The resistivity value of these thin films is found to be about 60&micro; -cm.
    Keywords: Tungsten silicide;sputtering;thin films;stoichiometry;resistivity