Research Journal of Applied Sciences

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On the Band Gaps and Band Offsets of Type I Multiple Quantum Well (MQW) System

J.S.A. Adelabu, J.O. Ajayi and A.O. Awodugba
Page: 1-4 | Received 21 Sep 2022, Published online: 21 Sep 2022

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Abstract

Measurements of Optical Absorption (OA) and Photoluminescence (PL) have been carried out on type I Multiple Quantum Well (MQW) system of GaAs-AlGaAs grown by Molecular Beam Epitaxy (MBE). An attempt has been made to compare exciton peak obtained for both heavy hole and light hole at band offset of 70/30 at different temperatures (Theory and Experiment). It is revealed from the investigation that the confinement energies of the particles increase with increase in the height of the potential barrier fro electron and decrease with increase in height of the potential barrier for light hole and heavy hole. The increase is more pronounced in the case of the light hole.

How to cite this article:

J.S.A. Adelabu, J.O. Ajayi and A.O. Awodugba. On the Band Gaps and Band Offsets of Type I Multiple Quantum Well (MQW) System.
DOI: https://doi.org/10.36478/rjasci.2013.1.4
URL: https://www.makhillpublications.co/view-article/1815-932x/rjasci.2013.1.4