Research Journal of Applied Sciences
ISSN: Online 1993-6079ISSN: Print 1815-932x
Abstract
Solar cells are known as reproducible, carbon-free electric energy resource to reduce the utilization of fossil fuel. Recently, around 40% energy conversion yield have been gained in laboratories using III-V semiconductor compounds as photovoltaic materials. One of the efforts and accomplishments done for higher efficiency III-V semiconductor compound solar cells with metallic plasmonstructures is declared, in this study Technological strategies for further performance improvement from the mostefficient (Al) In GaP/(In) GaAs/Ge triple-junction cells considering 1.0 eV band gap semiconductors are discussed. By adding metallic plasmonnano structures, we couldretouch photonic energy flow directions to increase sunlight absorption in thin photovoltaic semiconductor materials.
How to cite this article:
Nadereh Tabrizi. Implementation of Metallic Plasmon Nanostructures to Enhance Sunlight Absorption in Thin Photovoltaic III-V Semiconductor Compound Solar Cells.
DOI: https://doi.org/10.36478/rjasci.2016.410.414
URL: https://www.makhillpublications.co/view-article/1815-932x/rjasci.2016.410.414