TY  - JOUR
T1  - Comparison of Low Field Electron Transport in Zincblende and Wurtzite 6H-SiC Structures for High Gain Device Modeling
AU - Sarlak, F. AU - Arabshahi, H. 
JO  - International Journal of Electrical and Power Engineering
VL  - 5
IS  - 1
SP  - 18
EP  - 23
PY  - 2011
DA  - 2001/08/19
SN  - 1990-7958
DO  - ijepe.2011.18.23
UR  - https://makhillpublications.co/view-article.php?doi=ijepe.2011.18.23
KW  - Wurtzite
KW  -electron plasmon
KW  -zincblende
KW  -ionized impurity scattering
KW  -doping
KW  -phonon
AB  - Temperature and doping dependencies of electron mobility in both wurtzite and zincblende 6H-SiC structures have been calculated using an Iteravive technique. The following scattering mechanisims, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric and electron plasmon are inculded in the calculation. Ionized imurity scattering has been treated beyound the born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100-600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.
ER  -