TY  - JOUR
T1  - Electron Transport Characteristics of 6H-SiC and 4H-SiC for High Temperature Device Modeling
AU - Rokn Abadi, M. Rezaee AU - Arabshahi, H. 
JO  - International Journal of Electrical and Power Engineering
VL  - 5
IS  - 1
SP  - 1
EP  - 7
PY  - 2011
DA  - 2001/08/19
SN  - 1990-7958
DO  - ijepe.2011.1.7
UR  - https://makhillpublications.co/view-article.php?doi=ijepe.2011.1.7
KW  - Monte carlo
KW  -donor levels
KW  -velocity overshoot
KW  -non-parabolic
KW  -brillouin zone
KW  -ionized donor
AB  - The Monte Carlo method is used to simulate electron transport in bulk wurtzite phases of 6H-SiC and 4H-SiC using a three valley analytical band structure. Spherical, non-parabolic conduction band valleys at the &#915;, K and U symmetry points of the Brillouin zone are fitted to the first-principles band structure. The electron drift velocity is calculated as a function of temperature and ionized donor concentration in the ranges of 300-600 K and 10<SUP>16</SUP>-10<SUP>20</SUP> cm<SUP>-3</SUP>, respectively. Due to the freezout of deep donor levels the role of ionized impurity scattering in 6H-SiC is suppressed and the role of phonon scattering is enhanced, compared to 4H-SiC. For two materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain field unique to each material. This critical field is strongly dependent on the material parameters.
ER  -