TY  - JOUR
T1  - InP-Based Gunn Diodes with Stable Depletion Layer for
W-Band Waveguide Oscillator Applications
AU - Chan Kim, Sung AU - Choi, Seok-Gyu AU - Uhm, Won-Young 
JO  - Journal of Engineering and Applied Sciences
VL  - 13
IS  - 20
SP  - 8574
EP  - 8578
PY  - 2018
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2018.8574.8578
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2018.8574.8578
KW  - InP Gunn diode
KW  -stable depletion layer
KW  -W-band
KW  -waveguide
KW  -oscillator
KW  -output
AB  - In this study, we demonstrated the InP-based Gunn diode for W-band waveguide oscillator application. The fabricated InP-based Gunn diode has a Stable Depletion Layer (SDL) nn<sup>+</sup> structure for low operating currents, high output power and high dc-to-RF conversion efficiency. The 94 GHz waveguide oscillator was also developed in order to demonstrate the RF characteristics of the packaged InP-based Gunn diode. When the anode diameter of InP-based Gunn diode was 60 &mu;m, typical values of oscillation frequency and output power were 94.25 GHz and 16.11 dBm with a dc-to-RF conversion efficiency of 1.6%, respectively, at dc bias of 9 V. The highest output power of 19.1 dBm was obtained with a dc-to-RF conversion efficiency of 2.5% at dc bias of 11 V. The measured phase noise was &lt;-102.9 dBc/Hz at 1 MHz offset with 10 kHz of resolution bandwidth.
ER  -