TY  - JOUR
T1  - Improved Electrical Properties of PSi Photodetector by Embedding Ag
AU - Kream Alaarage, Warood 
JO  - Journal of Engineering and Applied Sciences
VL  - 13
IS  - 19
SP  - 8081
EP  - 8085
PY  - 2018
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2018.8081.8085
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2018.8081.8085
KW  - Porous Silicon (PSi)
KW  -silver nanoparticles
KW  -XRD
KW  -SEM
KW  -FTIR
KW  -photodetector
KW  -responsivity
AB  - The nanostructure silicon known as Porous Silicon (PSi) was prepared by the technique of electrochemical etching of crystalline silicon doped boron (p-type) with orientation (100) by using Teflon cell, HF with 40% concentration and Methanol with purity (99.9%) in (1:2) ratio at 9 mA/cm2 current density and 13 min etching time. Ag nanoparticles was prepared by chemical reduction method. The structural, optical and electrical properties was investigated by using X-Ray Diffraction (XRD) Scanning Electron Microscope (SEM) Fourier Transform Infrared Spectroscopy (FTIR) and UV-visible spectrum. The electrical properties of Ag/PSi/c-Si/Al junction was studied by using dark I-V, illuminated I-V, C-V measurement and responsivity. The current study showed improvement in the electrical properties PSi photodetector after embedding AgNPs.
ER  -