TY  - JOUR
T1  - Investigation of C-V and Gas Sensor Characteristics of Cd<sub>1-x</sub>Zn<sub>x</sub> S/n-Si Heterojunction Fabricated by Spray Pyrolysis Technique
AU - A. Ghazi, Rusul AU - B. Hasan, Nahida 
JO  - Journal of Engineering and Applied Sciences
VL  - 13
IS  - 14
SP  - 5926
EP  - 5931
PY  - 2018
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2018.5926.5931
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2018.5926.5931
KW  - C-V measurements
KW  -zinc sulfide
KW  -cadmium sulfide
KW  -Spray pyrolysis
KW  -sensitivity
KW  -operating temperature
AB  - In this research, Cd<sub>1-x</sub>Zn<sub>x</sub> S thin films were prepared by spray pyrolysis technique on silicon substrate 
at a temperature 360oC. The reverse bias capacitance for Cd<sub>1-x</sub>Zn<sub>x</sub> S/n-Si heterojunciton was measured as a

function of bias voltage at frequency 1MHz . The capacitance decreases with increasing of reverse bias voltage
and increase with vol. of (x), it increases from 334-577 pF with increase of the (x) while the depletion width
decreasing with increasing (x). We noted that these heterojunction are abrupt and the value of built-in potential
decreases from 0.7-0.27 V with increasing of the ZnS vol.%. The sensitivity as a function of operating
temperature in the range 100-300&deg;C for Cd<sub>1-x</sub>Zn<sub>x</sub> Sthin films were prepared by spray pyrolysis technique on glass 
substrate at 360&deg;C. It is obvious that the sensitivity of all films increases with increasing of the operating
temperature.
ER  -