TY  - JOUR
T1  - Effect of Threshold Roll-Off on Static Noise Margin of Sram Cell
AU - Kumar Ojha, Sunil AU - Vaya, P.R. AU - Mishra, G.R. AU - Singh, O.P. 
JO  - Journal of Engineering and Applied Sciences
VL  - 13
IS  - 14
SP  - 5801
EP  - 5806
PY  - 2018
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2018.5801.5806
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2018.5801.5806
KW  - transistors
KW  -Static Noise Margin (SNM)
KW  -SRAM cell
KW  -phenomena
KW  -System on Chip (SOC)
KW  -Threshold roll-off
KW  -sub-threshold current
AB  - The threshold roll-off is a vital phenomena to be considered for any low-power and small-scale circuit
design. With the advancement of the fabrication processes the channel length of the transistors is reducing
rapidly, this reduction in the channel length affects the threshold voltage of the transistors very severely. To
evaluate the effect of channel reduction on the threshold voltage this study analyzes the threshold roll-off by
taking SRAM cell into consideration. The reason behind choosing SRAM cell is that now the IC’s are fabricated
using System on Chip (SOC) design technique and currently approximately 70-80% of the SOC area are covered
by memories only. One of the most important figure of merit for SRAM cell is its Static Noise Margin (SNM)
and hence, the effect of threshold-roll is implemented with respect to SNM of the SRAM cell.
ER  -