TY - JOUR T1 - Atmosphere and Annealing Effect on the Structural, Optical and Electrical Properties of IndiumTin Oxide AU - S. Hassan, Ehssan AU - Fadhil Habubi, Nadir AU - Odda Dawod, Mohamed AU - Naji. Abd, Ahmed AU - J. Aziz, Wisam JO - Journal of Engineering and Applied Sciences VL - 13 IS - 24 SP - 10238 EP - 10244 PY - 2018 DA - 2001/08/19 SN - 1816-949x DO - jeasci.2018.10238.10244 UR - https://makhillpublications.co/view-article.php?doi=jeasci.2018.10238.10244 KW - cubic phase KW -enhanced KW -annealing atmosphere and transmittance KW -transitional conductive oxide KW -radio frequency magnetron sputtering KW -Indium-doped tin oxide AB - Indium-doped tin oxide In₂Sn₂O₇ thin films were deposited on Superior w. Germany glass substrate by RF magnetron sputtering technique using a popular ceramic target with a combination of In 8 wt.% and SnO₂ at a working pressure of 4.2H10^-3torr and radio frequency power of 100 W. These films were post-annealed at temperatures from 200-400°C for 1 h by both oxygen atmosphere and vacuum furnace. The resulting films were studied by X-ray diffraction reveals a poly crystalline structure of In₂Sn₂O₇ phase formation with diffraction peaks related to the cubic phase structure of In₂Sn₂O₇ according to JCPDS card 391058. The post-annealing atmospheric effects on micro structural, electrical and optical properties of In₂Sn₂O₇ films were determined. The results assure that at a higher annealing temperature, the crystallinity of In₂Sn₂O₇ films was enhanced, the optical transmittance of In₂Sn₂O₇ thin films was increased over 90% at 650 nm in the oxygen atmosphere, compared to 85% at 680 nm for the same annealing temperature in the vacuum atmosphere. The resistivity of In₂Sn₂O₇ thin films was increased with advanced annealing temperatures in the both vacuum and oxygen atmosphere furnace. ER -