TY  - JOUR
T1  - Performance Analysis of Electrical Characteristics for Short Channel Effects
(SCE) in Carbon Nano Tube Field Effect Transistor (CNTFET) Devices
AU - Murthy, G. Ramana AU - Singh, Ajay Kumar AU - Hossen, J. AU - Velrajkumar, P. 
JO  - Journal of Engineering and Applied Sciences
VL  - 12
IS  - 20
SP  - 5116
EP  - 5120
PY  - 2017
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2017.5116.5120
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2017.5116.5120
KW  - CNTFET
KW  -modulated channel potential
KW  -surface potential
KW  -threshold voltage roll-off
KW  -DIBL
KW  -evident
AB  - This study presents the study of electrical characteristics performance of Carbon Nanotube Field
Effect Transistor (CNTFET) devices in terms of modulated channel potential, surface potential, threshold
voltage, threshold voltage roll-off and Drain Induced Barrier Voltage (DIBL) effect. From the study, it is evident
that the modulated channel potential generally falls with drain voltage. The fall becomes steeper for higher
intrinsic carrier concentration. Surface potential is suppressed with the channel for larger oxide thickness.
Threshold voltage rises sharply when the channel length reduces below 6 nm whereas threshold voltage roll-off
is severe for lower oxide thickness. DIBL effect is more predominant for nano-scale devices and becomes severe
for larger oxide thickness due to poor coupling between the channel and the gate.
ER  -