TY  - JOUR
T1  - Study of Short-Circuits in Multicrystalline Si based Cells by the LBIC,
EL and EDS Methods
AU - Magomdbekov, Eldar P. AU - Orlov, Valery I. AU - Yakimov, Evgeniy B. AU - Danilin, Alexey B. 
JO  - Journal of Engineering and Applied Sciences
VL  - 12
IS  - 20
SP  - 5069
EP  - 5073
PY  - 2017
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2017.5069.5073
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2017.5069.5073
KW  - Reverse bias electroluminescence
KW  -EBIC
KW  -LBIC
KW  -solar cell
KW  -breakdown
KW  -malfunction
AB  - When using Si solar cells, there can be some difficulties due to shunts which lead to short circuits
that can cause a malfunction and the melting of the electrical wires with possible inflammation. Breakdown sites
in multicrystalline Si solar cells have been studied by the reverse-bias electroluminescence by the electron
(EBIC) and Laser Beam Induced Current (LBIC) and energy dispersive X-ray spectroscopy methods. In the
breakdown sites revealed by EL at small reverse bias (~5 V) the enhanced aluminum and oxygen concentration
is revealed. Such breakdowns can be located inside the depletion region because they are not revealed by the
EBIC or LBIC methods. Breakdowns revealed by EL at larger bias well correlate with extended defects in the
EBIC and LBIC images.
ER  -