TY  - JOUR
T1  - Improving the Efficiency of CdTe/CdS Thin Film Solar Cell Using Tunnel Junction
AU - Roshan, Mohammad Reza Farahmand AU - Borjlu, Shaban Rezaei AU - Sarabadani, Hosein 
JO  - Journal of Engineering and Applied Sciences
VL  - 11
IS  - 2
SP  - 216
EP  - 224
PY  - 2016
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2016.216.224
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2016.216.224
KW  - Solar cell
KW  -thin layer
KW  -open circuit voltage
KW  -CdTe
KW  -CdS
KW  -tunnel junction
AB  - There is a long time that CdTe/CdS thin film solar cells are globally attractive due to high efficiency, low production cost, not being sensitive to solar radiation angle. In a CdTe/CdS solar cell, electrical loads produced at distances >1 μm from joint part of CdTe and CdS have a little role in electrical conductivity mechanism due to the extent of link discharge area. Thus, it is important to decrease thickness of CdTe in order to reduce raw material use and also remix losses. On the other hand, decrease in thickness of CdTe layer would possibly increase surface remix of carriers at rear link causing decline in cell parameters. Therefore, exact considerations must perform to determine optimum thickness of CdTe absorptive layer. In this study, putting a tunnel junction within substrate structure of CdTe/Ge solar cell causes quantum tunneling between layers leading to increase in efficiency of thin layer solar cell. Simulation condition is under AM1.5 optical radiation. The results of our research with proposed structure caused 2.5, 4, 7.65 and 3.35% of increase in efficiency, Voc, Jsc and fill factor, respectively.
ER  -