TY  - JOUR
T1  - Small-Signal Modeling of pHEMTs and Analysis of their Microwave Performance
AU - Hamaizia, Z. AU - Sengouga, N. AU - Missous, M. AU - Yagoub, M.C.E. 
JO  - Journal of Engineering and Applied Sciences
VL  - 5
IS  - 4
SP  - 252
EP  - 256
PY  - 2010
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2010.252.256
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2010.252.256
KW  - pHEMT
KW  -extraction
KW  -small signal modeling
KW  -LANs
KW  -GaAs FET
KW  -Canada
AB  - Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an improved direct analytical extraction procedure. Its efficiency was demonstrated through the characterisation of two 1 μm gate-length pseudomorphic heterojonction transistors.
ER  -