TY  - JOUR
T1  - Prediction of the Breakdown Voltage of n-GaN Schottky diodes at High Temperatures using Online Neural Network Analysis
AU - Alade, M.O. AU - Akande, S.F. AU - Fajinmi, G.R. AU - Adewumi, A.S. AU - Alade, M. 
JO  - Journal of Engineering and Applied Sciences
VL  - 4
IS  - 2
SP  - 114
EP  - 118
PY  - 2009
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2009.114.118
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2009.114.118
KW  - High temperature
KW  -breakdown-voltage
KW  -n-GaN schottky diodes
KW  -neural network analysis
KW  -prediction
AB  - Variation of the Breakdown Voltage of n-GaN Schottky diodes over Temperature range (300-900 K) were predicted using online backpropagation neural analysis, based on the existing Sze and Monemar models. The results obtained show that the Breakdown Voltage of n-GaN Schottky diodes do not decrease rapidly with temperature increase, which is in agreement with the experimental results by Cao and earlier calculations using electronic calculator by Alade and Akande. Very high Breakdown Voltage (V<SUB>BD</SUB>>2 kV) is possible. The device can be useful to achieve stable electronic systems (solar panels, amplifiers and mixers) operating at high temperature.
ER  -