TY  - JOUR
T1  - Beyond of the Experimental Limit of SIMS In-Depth Resolution
AU - , M. Boulakroune AU - , D. Benatia 
JO  - Journal of Engineering and Applied Sciences
VL  - 2
IS  - 5
SP  - 808
EP  - 823
PY  - 2007
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2007.808.823
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2007.808.823
KW  - SIMS
KW  -in-depth resolution
KW  -DRF
KW  -deconvolution
KW  -silicon matrix
KW  -alogrithm
AB  - In this study, we describe the improvement of the in-depth resolution of SIMS analysis. So, an algorithm post-erosion is used in order to deconvolve some simulated and real SIMS profiles. The simulated profiles are chosen so that they correspond to real cases encountered by the SIMS analyst and clarify what can be expected from the method. The real SIMS profiles are obtained by analysis of delta-layers of boron-doped silicon in a silicon matrix, analyzed in a Cameca Ims6f at oblique angle incidence. It  is  shown  that  the in-depth resolution is improved by a mean factor, in almost of cases, supper than 3 and the shape of both profiles experimental and simulated is retrieved in a very satisfactory way.
ER  -