TY  - JOUR
T1  - Study of the Electron-Matter Interaction (Silicon Case)
AU - , Z. Elateche AU - , A. Nouiri 
JO  - Journal of Engineering and Applied Sciences
VL  - 2
IS  - 4
SP  - 788
EP  - 791
PY  - 2007
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2007.788.791
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2007.788.791
KW  - EBIC
KW  -minority carrier
KW  -diffusion length
KW  -calculation
KW  -Si
AB  - The characterization of semiconductors by a Scanning Electron Microscopy (SEM) using techniques like Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) is great interest. Nowadays Monte Carlo (MC) method becomes a very important tool to simulate the diffusion length by electron-matter interaction. In this research, we propose a new Monte Carlo calculation of electron depth and energy dissipation in silicon.
ER  -