TY  - JOUR
T1  - Characterization of Radiation Damage by Deposition of GaN on GaAs
AU - , N. Moussaoui AU - , M. Bouafia AU - , Dj. Boubetra 
JO  - Journal of Engineering and Applied Sciences
VL  - 2
IS  - 9
SP  - 1440
EP  - 1442
PY  - 2007
DA  - 2001/08/19
SN  - 1816-949x
DO  - jeasci.2007.1440.1442
UR  - https://makhillpublications.co/view-article.php?doi=jeasci.2007.1440.1442
KW  - Physical radiation effects
KW  -ions
KW  -argon ions
KW  -ellipsometry
KW  -semiconductors
KW  -gallium arsenide
KW  -gallium nitride
KW  -amorphization
AB  - Radiation damage by reactive magnetron sputtering deposition at low energies is connected with marked changes of optical constants of semiconductors. It will be shown, that  using ellipsometry and a special model can provide informations about relevant parameter of the  amorphization process of GaN/GaAS layer System. The procedure allows the quantification of the radiation damage in the nanometer range and the refractive index of the formed amorphous GaAs.
ER  -