TY  - JOUR
T1  - Design of 3.1-10.6 GHz Ultra-Wideband Cmos Low Noise Amplifier for Wireless Applications
AU - Azimi-Roein, Meysam AU - Golmakani, Abbas 
JO  - Research Journal of Applied Sciences
VL  - 11
IS  - 7
SP  - 463
EP  - 468
PY  - 2016
DA  - 2001/08/19
SN  - 1815-932x
DO  - rjasci.2016.463.468
UR  - https://makhillpublications.co/view-article.php?doi=rjasci.2016.463.468
KW  - CMOS
KW  -feedback
KW  -gain flaness
KW  -low noise amplifier
KW  -Ultra Wide Band (UWB)
AB  - Two ultra wideband Low Noise Amplifiers (LNAs) are presented. A common source topology is adopted for input stage to achieve wideband input matching while a cascode stage is used as the second stage to provide power gain at high frequencies. The first work is a LNA with resistive shunt feedback. It achieves a maximum power gain of 10.5 dB, a bandwidth of 10 GHz and 8.7 dB minimum noise fiqure. The power consumption is 14.28 mW from a 1.8 V supply. The second work is common source with a reuse pmos current source.
ER  -