TY  - JOUR
T1  - Implementation of Metallic Plasmon Nanostructures to Enhance Sunlight Absorption in Thin Photovoltaic III-V Semiconductor Compound Solar Cells
AU - Tabrizi, Nadereh 
JO  - Research Journal of Applied Sciences
VL  - 11
IS  - 7
SP  - 410
EP  - 414
PY  - 2016
DA  - 2001/08/19
SN  - 1815-932x
DO  - rjasci.2016.410.414
UR  - https://makhillpublications.co/view-article.php?doi=rjasci.2016.410.414
KW  - Solar energy
KW  -solar cells
KW  -photovoltaics
KW  -semiconductors
KW  -sunlight absorption enhancement
AB  - Solar cells are known as reproducible, carbon-free electric energy resource to reduce the utilization of fossil fuel. Recently, around 40% energy conversion yield have been gained in laboratories using III-V semiconductor compounds as photovoltaic materials. One of the efforts and accomplishments done for higher efficiency III-V semiconductor compound solar cells with metallic plasmonstructures is declared, in this study Technological strategies for further performance improvement from the mostefficient (Al) In GaP/(In) GaAs/Ge triple-junction cells considering 1.0 eV band gap semiconductors are discussed. By adding metallic plasmonnano structures, we couldretouch photonic energy flow directions to increase sunlight absorption in thin photovoltaic semiconductor materials.
ER  -