TY  - JOUR
T1  - Calculation of High Field Electron Transport Properties in GaSb and GaAS Using a Monte Carlo Method
AU - Taghavi, F. AU - Arabshahi, H. 
JO  - Research Journal of Applied Sciences
VL  - 6
IS  - 3
SP  - 213
EP  - 217
PY  - 2011
DA  - 2001/08/19
SN  - 1815-932x
DO  - rjasci.2011.213.217
UR  - https://makhillpublications.co/view-article.php?doi=rjasci.2011.213.217
KW  - Iran
KW  -numerical formulations
KW  -overshoot velocity
KW  - materials
KW  -ionized impurity scattering
KW  -Monte Carlo method
AB  - Electron transport properties in GaSb and GaAs are calculated for different temperature, doping dependencies at high electric field applications. The calculations are performed using a three valleys ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and ionized impurity scattering rates. For two materials, it is found that electron velocity overshoot only occurs when the electric field in increased to a value above a certain critical field. This critical field is strongly dependent on the material parameters. Results from the two materials are finally compared. The agreement with the available experimental data is found to be satisfactory.
ER  -