TY  - JOUR
T1  - Bismuth Sulphide Thin Films by Chemical Deposition for Photoconductivity Application
AU - , G.R. Fajinmi AU - , J.S.A. Adelabu 
JO  - Research Journal of Applied Sciences
VL  - 3
IS  - 8
SP  - 521
EP  - 523
PY  - 2008
DA  - 2001/08/19
SN  - 1815-932x
DO  - rjasci.2008.521.523
UR  - https://makhillpublications.co/view-article.php?doi=rjasci.2008.521.523
KW  - Bismuth sulphide thin film
KW  -chemical bath deposition
KW  -annealing
KW  -conductivity enhancement
AB  - Chemical bath deposition technique for obtaining photoconductivity Bismuth Sulphide (Bi<SUB>2</SUB>S<SUB>3</SUB>) thin films of thickness of about 0.07-0.19 µm is reported. At room temperature, the deposition ranges from 1-7.5 h beyond  which  the  films start to detach from the substrate. These films show a change in dark resistance of 0.2 m  for a change of 0.12 µm in thickness. The dark conductivity of the film increased by a factor of 3 when annealed at 150°C for 2 h. The films showed a photo current to dark current ratio of 75-150 for the as-prepared film under 1 kWm<SUP>-2</SUP> tungsten halogen illumination. These results suggest that post deposited annealing will enhance the performance of the films in the area of optoelectronic applications.
ER  -