TY  - JOUR
T1  - Z-TCAM: An Efficient Memory Architecture Based TCAM
AU - Vivek, C. AU - Palanivel Rajan, S. 
JO  - Asian Journal of Information Technology
VL  - 15
IS  - 3
SP  - 448
EP  - 454
PY  - 2016
DA  - 2001/08/19
SN  - 1682-3915
DO  - ajit.2016.448.454
UR  - https://makhillpublications.co/view-article.php?doi=ajit.2016.448.454
KW  - Ternary Content Addressable Memory (TCAM)
KW  -Static Random Access Memory (SRAM)
KW  -Spin Torque Tunnel RAM (STT-RAM)
KW  -Magnetic Tunnel Junction (MTJ)
KW  -rapid
AB  - Ternary Content Addressable Memory (TCAM) is normally utilized as a part of rapid inquiry concentrated applications, for example, ATM switch, IP channels. Consequently, presently Z-TCAM is presented which copies the TCAM usefulness with SRAM. It has a few disadvantages, for example, low versatility, low stockpiling thickness, moderate access time and high cost. Be that as it may this system proposes a novel memory structural planning of existing Z-TCAM utilizing STT-RAM. Subsequently, the range delay and force are lessened by utilizing STT-RAM. The point by point usage results and power estimations for every outline have been accounted for altogether using modelsim and quartus tool. Power measurements for each design have been reported thoroughly.
ER  -