TY  - JOUR
T1  - Tungsten Silicide Thin Films Preparation  by Magnetron Sputtering
AU - , H. Karmed AU - , A. Khellaf 
JO  - Asian Journal of Information Technology
VL  - 5
IS  - 12
SP  - 1383
EP  - 1385
PY  - 2006
DA  - 2001/08/19
SN  - 1682-3915
DO  - ajit.2006.1383.1385
UR  - https://makhillpublications.co/view-article.php?doi=ajit.2006.1383.1385
KW  - Tungsten silicide
KW  -sputtering
KW  -thin films
KW  -stoichiometry
KW  -resistivity
AB  - Tungsten silicide thin films were deposited on a Si substrate  by magnetron RF  sputtering of a composite target. In the first experiment, sputtering of  a WSi<SUB>2</SUB> target was performed in a silane-argon atmosphere (reactive sputtering). Thin films with ratio Si/W = 1.07 were obtained at the largest partial silane pressure allowed for in the sputtering apparatus. In the second experiment, Si richer thin films were obtained by non-reactive sputtering of a WSi<SUB>2.7</SUB> target where a Si/W ratio of 1.7 was found. The ratio Si/W was measured by the Rutherford backscattering technique. After annealing for 30 minutes in a N<SUB>2</SUB> atmosphere at 1000 C X-ray diffraction  shows  the  tetragonal  structure of WSi<SUB>2</SUB>. The resistivity value of these thin films is found to be about 60&micro; -cm.
ER  -