@article{MAKHILLIJEPE20115125230,
    title = {Electron Transport Characteristics of 6H-SiC and 4H-SiC for High Temperature Device Modeling},
    journal = {International Journal of Electrical and Power Engineering},
    volume = {5},
    number = {1},
    pages = {1-7},
    year = {2011},
    issn = {1990-7958},
    doi = {ijepe.2011.1.7},
    url = {https://makhillpublications.co/view-article.php?issn=1990-7958&doi=ijepe.2011.1.7},
    author = {M. Rezaee and},
    keywords = {Monte carlo,donor levels,velocity overshoot,non-parabolic,brillouin zone,ionized donor},
    abstract = {The Monte Carlo method is used to simulate electron transport in bulk wurtzite phases of 6H-SiC and 4H-SiC using a three valley analytical band structure. Spherical, non-parabolic conduction band valleys at the &#915;, K and U symmetry points of the Brillouin zone are fitted to the first-principles band structure. The electron drift velocity is calculated as a function of temperature and ionized donor concentration in the ranges of 300-600 K and 10<SUP>16</SUP>-10<SUP>20</SUP> cm<SUP>-3</SUP>, respectively. Due to the freezout of deep donor levels the role of ionized impurity scattering in 6H-SiC is suppressed and the role of phonon scattering is enhanced, compared to 4H-SiC. For two materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain field unique to each material. This critical field is strongly dependent on the material parameters.}
    }