@article{MAKHILLIJEPE20071325061,
    title = {Modelling and Simulation of the Thermal Behaviour of the Offset Voltage of Piezoresistive Pressure Sensors},
    journal = {International Journal of Electrical and Power Engineering},
    volume = {1},
    number = {3},
    pages = {295-299},
    year = {2007},
    issn = {1990-7958},
    doi = {ijepe.2007.295.299},
    url = {https://makhillpublications.co/view-article.php?issn=1990-7958&doi=ijepe.2007.295.299},
    author = {M. Ras Lain,A. Chaabi and},
    keywords = {Offset voltage,pressur sensor, temperature coefficient,doping concentration},
    abstract = {Based on the phenomena of displacement of the majority carriers in silicon and based on the assumption that each piezoresistor of a silicon pressur sensor has its own temperature coefficients (TCRs of the first and second order), this study gives an explanation on the existence of the offset volage in the piezoresitif pressure sensors and its thermal behaviour. Using different models of majority carriers mobility in silicon, this study presents a  new  formula  for  the  first  and  the  second  temperature   coefficient    and   in function  of  doping  concentration  N  (cm <SUP>3</SUP>)<I>.</I>On  the   other   hand,  this   new   presentation   enable  us to  present  the  thermal  behaviour  of  piezoresistive  pressure  sensors  in   function  of  2  parameters  namely the  doping  concentration  N   (cm <SUP>3</SUP>)  and  temperature  T (°C)  then  we  report  the   effect of the temperature on the offset voltage.}
    }