@article{MAKHILLJEAS2018131916919,
    title = {Improved Electrical Properties of PSi Photodetector by Embedding Ag},
    journal = {Journal of Engineering and Applied Sciences},
    volume = {13},
    number = {19},
    pages = {8081-8085},
    year = {2018},
    issn = {1816-949x},
    doi = {jeasci.2018.8081.8085},
    url = {https://makhillpublications.co/view-article.php?issn=1816-949x&doi=jeasci.2018.8081.8085},
    author = {Warood},
    keywords = {Porous Silicon (PSi),silver nanoparticles,XRD,SEM,FTIR,photodetector,responsivity},
    abstract = {The nanostructure silicon known as Porous Silicon (PSi) was prepared by the technique of electrochemical etching of crystalline silicon doped boron (p-type) with orientation (100) by using Teflon cell, HF with 40% concentration and Methanol with purity (99.9%) in (1:2) ratio at 9 mA/cm2 current density and 13 min etching time. Ag nanoparticles was prepared by chemical reduction method. The structural, optical and electrical properties was investigated by using X-Ray Diffraction (XRD) Scanning Electron Microscope (SEM) Fourier Transform Infrared Spectroscopy (FTIR) and UV-visible spectrum. The electrical properties of Ag/PSi/c-Si/Al junction was studied by using dark I-V, illuminated I-V, C-V measurement and responsivity. The current study showed improvement in the electrical properties PSi photodetector after embedding AgNPs.}
    }