@article{MAKHILLJEAS2018132417247,
    title = {Atmosphere and Annealing Effect on the Structural, Optical and
Electrical Properties of IndiumTin Oxide},
    journal = {Journal of Engineering and Applied Sciences},
    volume = {13},
    number = {24},
    pages = {10238-10244},
    year = {2018},
    issn = {1816-949x},
    doi = {jeasci.2018.10238.10244},
    url = {https://makhillpublications.co/view-article.php?issn=1816-949x&doi=jeasci.2018.10238.10244},
    author = {Ehssan,Nadir,Mohamed,Ahmed and},
    keywords = {cubic phase,enhanced,annealing atmosphere and transmittance,transitional conductive oxide,radio frequency magnetron sputtering,Indium-doped tin oxide},
    abstract = {Indium-doped tin oxide In<sub>2</sub>Sn<sub>2</sub>O<sub>7</sub> thin films were deposited on Superior w. Germany glass substrate by RF magnetron sputtering technique using a popular ceramic target with a combination of In 8 wt.% and SnO<sub>2</sub> at a working pressure of 4.2H10<sup>-3 </sup>torr and radio frequency power of 100 W. These films were post-annealed at temperatures from 200-400&deg;C for 1 h by both oxygen atmosphere and vacuum furnace. The resulting films were studied by X-ray diffraction reveals a poly crystalline structure of In<sub>2</sub>Sn<sub>2</sub>O<sub>7</sub> phase formation with diffraction peaks related to the cubic phase structure of In<sub>2</sub>Sn<sub>2</sub>O<sub>7</sub> according to JCPDS card 391058. The post-annealing atmospheric effects on micro structural, electrical and optical properties of In<sub>2</sub>Sn<sub>2</sub>O<sub>7</sub> films were determined. The results assure that at a higher annealing temperature, the crystallinity of In<sub>2</sub>Sn<sub>2</sub>O<sub>7</sub> films was enhanced, the optical transmittance of In<sub>2</sub>Sn<sub>2</sub>O<sub>7</sub> thin films was increased over 90% at 650 nm in the oxygen atmosphere, compared to 85% at 680 nm for the same annealing temperature in the vacuum atmosphere. The resistivity of In<sub>2</sub>Sn<sub>2</sub>O<sub>7</sub> thin films was increased with advanced annealing temperatures in the both vacuum and oxygen atmosphere furnace.}
    }