@article{MAKHILLJEAS2017122014893,
    title = {Study of Short-Circuits in Multicrystalline Si based Cells by the LBIC,
EL and EDS Methods},
    journal = {Journal of Engineering and Applied Sciences},
    volume = {12},
    number = {20},
    pages = {5069-5073},
    year = {2017},
    issn = {1816-949x},
    doi = {jeasci.2017.5069.5073},
    url = {https://makhillpublications.co/view-article.php?issn=1816-949x&doi=jeasci.2017.5069.5073},
    author = {Eldar P.,Valery I.,Evgeniy B. and},
    keywords = {Reverse bias electroluminescence,EBIC,LBIC,solar cell,breakdown,malfunction},
    abstract = {When using Si solar cells, there can be some difficulties due to shunts which lead to short circuits
that can cause a malfunction and the melting of the electrical wires with possible inflammation. Breakdown sites
in multicrystalline Si solar cells have been studied by the reverse-bias electroluminescence by the electron
(EBIC) and Laser Beam Induced Current (LBIC) and energy dispersive X-ray spectroscopy methods. In the
breakdown sites revealed by EL at small reverse bias (~5 V) the enhanced aluminum and oxygen concentration
is revealed. Such breakdowns can be located inside the depletion region because they are not revealed by the
EBIC or LBIC methods. Breakdowns revealed by EL at larger bias well correlate with extended defects in the
EBIC and LBIC images.}
    }