@article{MAKHILLJEAS20072412754,
    title = {Study of the Electron-Matter Interaction (Silicon Case)},
    journal = {Journal of Engineering and Applied Sciences},
    volume = {2},
    number = {4},
    pages = {788-791},
    year = {2007},
    issn = {1816-949x},
    doi = {jeasci.2007.788.791},
    url = {https://makhillpublications.co/view-article.php?issn=1816-949x&doi=jeasci.2007.788.791},
    author = {Z. Elateche and},
    keywords = {EBIC,minority carrier,diffusion length,calculation,Si},
    abstract = {The characterization of semiconductors by a Scanning Electron Microscopy (SEM) using techniques like Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) is great interest. Nowadays Monte Carlo (MC) method becomes a very important tool to simulate the diffusion length by electron-matter interaction. In this research, we propose a new Monte Carlo calculation of electron depth and energy dissipation in silicon.}
    }