@article{MAKHILLJEAS20072912861,
    title = {Characterization of Radiation Damage by Deposition of GaN on GaAs},
    journal = {Journal of Engineering and Applied Sciences},
    volume = {2},
    number = {9},
    pages = {1440-1442},
    year = {2007},
    issn = {1816-949x},
    doi = {jeasci.2007.1440.1442},
    url = {https://makhillpublications.co/view-article.php?issn=1816-949x&doi=jeasci.2007.1440.1442},
    author = {N. Moussaoui,M. Bouafia and},
    keywords = {Physical radiation effects,ions,argon ions,ellipsometry,semiconductors,gallium arsenide,gallium nitride,amorphization},
    abstract = {Radiation damage by reactive magnetron sputtering deposition at low energies is connected with marked changes of optical constants of semiconductors. It will be shown, that  using ellipsometry and a special model can provide informations about relevant parameter of the  amorphization process of GaN/GaAS layer System. The procedure allows the quantification of the radiation damage in the nanometer range and the refractive index of the formed amorphous GaAs.}
    }