@article{MAKHILLRJAS20161179796,
    title = {Design of 3.1-10.6 GHz Ultra-Wideband Cmos Low Noise Amplifier for Wireless Applications},
    journal = {Research Journal of Applied Sciences},
    volume = {11},
    number = {7},
    pages = {463-468},
    year = {2016},
    issn = {1815-932x},
    doi = {rjasci.2016.463.468},
    url = {https://makhillpublications.co/view-article.php?issn=1815-932x&doi=rjasci.2016.463.468},
    author = {Meysam and},
    keywords = {CMOS,feedback,gain flaness,low noise amplifier,Ultra Wide Band (UWB)},
    abstract = {Two ultra wideband Low Noise Amplifiers (LNAs) are presented. A common source topology is adopted for input stage to achieve wideband input matching while a cascode stage is used as the second stage to provide power gain at high frequencies. The first work is a LNA with resistive shunt feedback. It achieves a maximum power gain of 10.5 dB, a bandwidth of 10 GHz and 8.7 dB minimum noise fiqure. The power consumption is 14.28 mW from a 1.8 V supply. The second work is common source with a reuse pmos current source.}
    }