@article{MAKHILLRJAS201611129964,
    title = {New Structure of III-V Tandem Solar Cells Based on Crystalline
Silicon by using Trough Concentrator},
    journal = {Research Journal of Applied Sciences},
    volume = {11},
    number = {12},
    pages = {1526-1533},
    year = {2016},
    issn = {1815-932x},
    doi = {rjasci.2016.1526.1533},
    url = {https://makhillpublications.co/view-article.php?issn=1815-932x&doi=rjasci.2016.1526.1533},
    author = {Rached,Mourad,Mohamed Fathi and},
    keywords = {GaInP/GaAs/c-Si,tandem solar cells,new structure,AM1,5 illumination},
    abstract = {Multi-junction Solar Cells (SC) made from III-V compound semiconductors are still in the development phase. Here, we perform calculations for multi-junction cells: GaInP and GaAs based on crystalline silicon (With band-gaps, respectively 1.85, 1.42 and 1.1eV) in order to obtain the optimal thickness and efficiency for each junction under the AM1.5 solar radiation spectrum. The ideal photo-current density is around 9.2 mAcm<sup>&#150;2</sup> In order to reduce the problem of mismatch between cells and the tunnel junction costs and fabrication, we use a new structure of tandem solar cells in it we separates the cells in a good theoretical model. The expected conversion efficiency (&#951;), under the AM1.5 spectrum (without tunnel junction), was determined to be around 46%, making this an attractive III-V compound tandem cell with crystalline silicon to be investigated in the near future.}
    }