@article{MAKHILLAJIT20065125268,
    title = {Tungsten Silicide Thin Films Preparation  by Magnetron Sputtering},
    journal = {Asian Journal of Information Technology},
    volume = {5},
    number = {12},
    pages = {1383-1385},
    year = {2006},
    issn = {1682-3915},
    doi = {ajit.2006.1383.1385},
    url = {https://makhillpublications.co/view-article.php?issn=1682-3915&doi=ajit.2006.1383.1385},
    author = {H. Karmed and},
    keywords = {Tungsten silicide,sputtering,thin films,stoichiometry,resistivity},
    abstract = {Tungsten silicide thin films were deposited on a Si substrate  by magnetron RF  sputtering of a composite target. In the first experiment, sputtering of  a WSi<SUB>2</SUB> target was performed in a silane-argon atmosphere (reactive sputtering). Thin films with ratio Si/W = 1.07 were obtained at the largest partial silane pressure allowed for in the sputtering apparatus. In the second experiment, Si richer thin films were obtained by non-reactive sputtering of a WSi<SUB>2.7</SUB> target where a Si/W ratio of 1.7 was found. The ratio Si/W was measured by the Rutherford backscattering technique. After annealing for 30 minutes in a N<SUB>2</SUB> atmosphere at 1000 C X-ray diffraction  shows  the  tetragonal  structure of WSi<SUB>2</SUB>. The resistivity value of these thin films is found to be about 60&micro; -cm.}
    }