@article{MAKHILLAJIT20065115245,
    title = {Microstructural and Characteristics Study of Low Voltage ZnO-Bi<SUB>2</SUB>O<SUB>3</SUB>-Based Varistor Doped with Cr<SUB>2</SUB>O<SUB>3</SUB>, SiO<SUB>2 </SUB>and Varying Amounts of Al<SUB>2</SUB>O<SUB>3</SUB>},
    journal = {Asian Journal of Information Technology},
    volume = {5},
    number = {11},
    pages = {1248-1255},
    year = {2006},
    issn = {1682-3915},
    doi = {ajit.2006.1248.1255},
    url = {https://makhillpublications.co/view-article.php?issn=1682-3915&doi=ajit.2006.1248.1255},
    author = {A. Djelloul,A. Boumaza,N. Bouzid,A. Mahdjoub and},
    keywords = {Varistor,microstructure,ZnO,ZnAl2O4},
    abstract = {ZnO-Bi<SUB>2</SUB>O<SUB>3</SUB>-based varistor samples doped with 2.0 mol% of (Cr<SUB>2</SUB>O<SUB>3</SUB>+SiO<SUB>2</SUB>) and varying amounts of Al<SUB>2</SUB>O<SUB>3</SUB> in the range from 7.0 to 1.0 mol% were fired at 1200°C for 2h. Anew process is described for achieving the current-voltage characteristics ofa low voltage ZnO varistor. Second phases, segregated and precipitated in ZnO-based varistors, encountered in triple junctions and grain boundaries regions were identified using XRD, SEM and energy dispersive spectrometry. Using IR spectroscopy we have observed OH and H<SUB>2</SUB>O molecular  stretch  modes  at 3444.24 cm<SUP>-1</SUP> with a width of 273.53 cm<SUP>-1</SUP> and near 1637.27 cm<SUP>-1</SUP> with a width of 42.64 cm<SUP>-1</SUP> respectively. The hydrogen in Al doped ZnO-Bi<SUB>2</SUB>O<SUB>3</SUB>-based varistor may have a one site preference, resulting in a wider OH peak. The band at 662 cm<SUP>-1</SUP> should be due to the presence of the ZnAl<SUB>2</SUB>O<SUB>4</SUB> spinel, undoubtedly identified in the XRD patterns of sintered ceramics. Addition of hydrogen to aluminium doped varistors slow down the grain growth effect.}
    }