M. Rezaee  Rokn Abadi, H.  Arabshahi, 
    Electron Transport Characteristics of 6H-SiC and 4H-SiC for High Temperature Device Modeling,
    International Journal of Electrical and Power Engineering,
    Volume 5,Issue 1,
    2011,
    Pages 1-7,
    ISSN 1990-7958,
    ijepe.2011.1.7,
    (https://makhillpublications.co/view-article.php?doi=ijepe.2011.1.7)
    Abstract: The Monte Carlo method is used to simulate electron transport in bulk wurtzite phases of 6H-SiC and 4H-SiC using a three valley analytical band structure. Spherical, non-parabolic conduction band valleys at the &#915;, K and U symmetry points of the Brillouin zone are fitted to the first-principles band structure. The electron drift velocity is calculated as a function of temperature and ionized donor concentration in the ranges of 300-600 K and 10<SUP>16</SUP>-10<SUP>20</SUP> cm<SUP>-3</SUP>, respectively. Due to the freezout of deep donor levels the role of ionized impurity scattering in 6H-SiC is suppressed and the role of phonon scattering is enhanced, compared to 4H-SiC. For two materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain field unique to each material. This critical field is strongly dependent on the material parameters.
    Keywords: Monte carlo;donor levels;velocity overshoot;non-parabolic;brillouin zone;ionized donor