Rached  Ganouni, Mourad  Talbi, Mohamed Fathi  Boujmil, Hatem  Ezzaouia, 
    New Structure of III-V Tandem Solar Cells Based on Crystalline
Silicon by using Trough Concentrator,
    Research Journal of Applied Sciences,
    Volume 11,Issue 12,
    2016,
    Pages 1526-1533,
    ISSN 1815-932x,
    rjasci.2016.1526.1533,
    (https://makhillpublications.co/view-article.php?doi=rjasci.2016.1526.1533)
    Abstract: Multi-junction Solar Cells (SC) made from III-V compound semiconductors are still in the development phase. Here, we perform calculations for multi-junction cells: GaInP and GaAs based on crystalline silicon (With band-gaps, respectively 1.85, 1.42 and 1.1eV) in order to obtain the optimal thickness and efficiency for each junction under the AM1.5 solar radiation spectrum. The ideal photo-current density is around 9.2 mAcm<sup>&#150;2</sup> In order to reduce the problem of mismatch between cells and the tunnel junction costs and fabrication, we use a new structure of tandem solar cells in it we separates the cells in a good theoretical model. The expected conversion efficiency (&#951;), under the AM1.5 spectrum (without tunnel junction), was determined to be around 46%, making this an attractive III-V compound tandem cell with crystalline silicon to be investigated in the near future.
    Keywords: GaInP/GaAs/c-Si;tandem solar cells;new structure;AM1;5 illumination