G.R. Fajinmi  , J.S.A. Adelabu  , 
    Bismuth Sulphide Thin Films by Chemical Deposition for Photoconductivity Application,
    Research Journal of Applied Sciences,
    Volume 3,Issue 8,
    2008,
    Pages 521-523,
    ISSN 1815-932x,
    rjasci.2008.521.523,
    (https://makhillpublications.co/view-article.php?doi=rjasci.2008.521.523)
    Abstract: Chemical bath deposition technique for obtaining photoconductivity Bismuth Sulphide (Bi<SUB>2</SUB>S<SUB>3</SUB>) thin films of thickness of about 0.07-0.19 µm is reported. At room temperature, the deposition ranges from 1-7.5 h beyond  which  the  films start to detach from the substrate. These films show a change in dark resistance of 0.2 m  for a change of 0.12 µm in thickness. The dark conductivity of the film increased by a factor of 3 when annealed at 150°C for 2 h. The films showed a photo current to dark current ratio of 75-150 for the as-prepared film under 1 kWm<SUP>-2</SUP> tungsten halogen illumination. These results suggest that post deposited annealing will enhance the performance of the films in the area of optoelectronic applications.
    Keywords: Bismuth sulphide thin film;chemical bath deposition;annealing;conductivity enhancement