TY  - JOUR
T1  - Monte Carlo Simulation of GaN Submicron n<SUP>+</SUP>-n-n<SUP>+</SUP> Diode with AlGaN Heterojunction Cathode
AU - Arabshahi, H. AU - Ghodsi Nahri, D. 
JO  - Research Journal of Applied Sciences
VL  - 6
IS  - 3
SP  - 140
EP  - 142
PY  - 2011
DA  - 2001/08/19
SN  - 1815-932x
DO  - rjasci.2011.140.142
UR  - https://makhillpublications.co/view-article.php?doi=rjasci.2011.140.142
KW  - Ensemble monte carlo
KW  -submicron
KW  -heterojunction
KW  -drift velocity
KW  -channel
KW  -Iran
AB  - An ensemble Monte Carlo simulation has been developed to simulate the motion of electrons in a submicron GaN diode with a Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers. The analysis has also shown that the mean drift velocity for electrons in the channel is about 2x10<SUP>5</SUP> m sec<SUP>-1</SUP> at bias 4 V. Mean drift velocity in channel decrease with temperature and reach to saturated value about 1.5x10<SUP>5</SUP> m sec<SUP>-1</SUP>.
ER  -