TY  - JOUR
T1  - Comparison of High Field Electron Transport Properties in Wurtzite Phase of ZnO, GaN and SiC
AU - Bagh-Siyahi, F. Badieyan AU - Rokn-Abadi, M. Rezaee AU - Arabshahi, H. 
JO  - Research Journal of Applied Sciences
VL  - 5
IS  - 3
SP  - 215
EP  - 220
PY  - 2010
DA  - 2001/08/19
SN  - 1815-932x
DO  - rjasci.2010.215.220
UR  - https://makhillpublications.co/view-article.php?doi=rjasci.2010.215.220
KW  - scattering mechanisims
KW  -steady-state
KW  -overshoot
KW  -drift velocity
KW  -Ensemble Monte Carlo
KW  -temprature
AB  - Temperature and doping dependencies of electron drift velocity in wurtzite ZnO structure have been calculated using ensemble Monte Carlo method and compared with electron drift velocity in GaN and SiC in steady-state and transient situation. The following scattering mechanisims i.e., impurity, polar optical phonon and acoustic phonon are inculded in the calculation. The maximum electron drift velocity that is obtained in room temperature for 10<SUP>23</SUP> m<SUP>-3</SUP> donor concentration are 2.2x10<SUP>7</SUP>, 3x10<SUP>7</SUP> cm sec<SUP>-1</SUP> for ZnO and GaN, respectively. SiC shows the negative differential mobility just in low temperature. For high applied electric field transient electron drift velocity shows a significant overshoot in ZnO and GaN.
ER  -