@article{MAKHILLRJAS2008388960,
    title = {Bismuth Sulphide Thin Films by Chemical Deposition for Photoconductivity Application},
    journal = {Research Journal of Applied Sciences},
    volume = {3},
    number = {8},
    pages = {521-523},
    year = {2008},
    issn = {1815-932x},
    doi = {rjasci.2008.521.523},
    url = {https://makhillpublications.co/view-article.php?issn=1815-932x&doi=rjasci.2008.521.523},
    author = {G.R. Fajinmi and},
    keywords = {Bismuth sulphide thin film,chemical bath deposition,annealing,conductivity enhancement},
    abstract = {Chemical bath deposition technique for obtaining photoconductivity Bismuth Sulphide (Bi<SUB>2</SUB>S<SUB>3</SUB>) thin films of thickness of about 0.07-0.19 µm is reported. At room temperature, the deposition ranges from 1-7.5 h beyond  which  the  films start to detach from the substrate. These films show a change in dark resistance of 0.2 m  for a change of 0.12 µm in thickness. The dark conductivity of the film increased by a factor of 3 when annealed at 150°C for 2 h. The films showed a photo current to dark current ratio of 75-150 for the as-prepared film under 1 kWm<SUP>-2</SUP> tungsten halogen illumination. These results suggest that post deposited annealing will enhance the performance of the films in the area of optoelectronic applications.}
    }