@article{MAKHILLJEAS201813415544,
    title = {Fabrication and Enhancement of SnS:Ag/Si Solar Cell via. Thermal
Evaporation Technique},
    journal = {Journal of Engineering and Applied Sciences},
    volume = {13},
    number = {4},
    pages = {919-925},
    year = {2018},
    issn = {1816-949x},
    doi = {jeasci.2018.919.925},
    url = {https://makhillpublications.co/view-article.php?issn=1816-949x&doi=jeasci.2018.919.925},
    author = {Khalid Haneen,Musaab Khudhur and},
    keywords = {efficiency,solar cell,optical properties,thermal evaporation,SnS:Ag,factor},
    abstract = {In this rsearch, pure tin Sulfide (SnS) and 20 nm Ag nanoparticle-doped SnS (0.002, 0.004
and 0.006 wt.%) thin films are prepared by thermal evaporation technique with thickness of 75 nm. The X-Ray
Diffraction (XRD) result showed that, the prepared films are polycrystalline with orthorhombic structure and
preferential orientation in the 111 direction. The crystallite size refer to the quantization confinement effect that
calculated from Scherer’s formula, it increased with increasing of Ag doping. From Scanning Electron
Microscopy (SEM) and Atomic Force Microscopy (AFM), the films morphology and surface roughness were
affected by low Ag doping. The optical measurements of the films are studied by UV-visible spectrophotometer
in the wavelength range 300-900 nm. The transmittance decreased with the increasing of Ag doping while the
absorbance increased. The optical measurement shows that, the films are allowed direct Energy gap (E<sub>g</sub>) that 
decreased from 3-2 eV with increasing of Ag-doping, the values of energy gaps refer to the confinement effect.
The electrical properties of the films have been studied and found that the prepared films are p-type and carrier
concentration (n) and electrical conductivity (&sigma;) increased with the increasing of Ag doping. I-V characteristics
show that, the Ag-doping increases the energy conversion efficiency by retarding the electron-hole
recombination and the improved device performance caused by the high short-circuit current (I<sub>sc</sub>) and open 
circuit Voltage (V<sub>oc</sub>) and found that the highest efficiency (&eta;) at doping 0.006 wt.% is 4.42% with (V<sub>oc</sub>) of 2.5 V  
(I<sub>sc</sub>) of 7 mA cm<sup>&#150;2</sup> and Fill Factor (F.F) of 0.25 at intensity p =100 mW/cm<sup>2</sup> .}
    }